4
RF Device Data
Freescale Semiconductor
MRF7S19120NR1
Figure 1. MRF7S19120NR1 Test Circuit Schematic
VBIAS
VSUPPLY
RF
OUTPUT
RF
INPUT
DUT
C2
C3
C5
C6
R2
Z1
Z2
Z3
Z4
C7
Z7
C8
Z9
Z10
Z11
C1
+
R1
C4
R3
Z5
Z6
Z8
Z12
C10
C11
C9
Z8 0.880″
x 0.210″
Microstrip
Z9 0.730″
x 0.350″
Microstrip
Z10 0.440″
x 0.130″
Microstrip
Z11 0.084″
x 0.700″
Microstrip
Z12 0.084″
x 0.743″
Microstrip
PCB Arlon CuClad 250GX--0300--55--22, 0.030″,
εr
=2.55
Z1 0.084″
x 0.744″
Microstrip
Z2 0.084″
x 0.797″
Microstrip
Z3 0.362″
x 0.100″
Microstrip
Z4 0.612″
x 0.380″
Microstrip
Z5 1.000″
x 0.125″
Microstrip
Z6 1.000″
x 0.090″
Microstrip
Z7 0.880″
x0.111″
Microstrip
Table 6. MRF7S19120NR1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
10
μF, 35 V Tantalum Capacitor
T491D106K035AT
Kemet
C2
0.01
μF Chip Capacitor
C1825C103J1GAC
Kemet
C3, C4, C8, C9
5.1 pF Chip Capacitors
ATC100B5R1BT500XT
ATC
C5, C6, C10, C11
10
μF Chip Capacitors
GRM55DR61H106KA88L
Murata
C7
11 pF Chip Capacitor
ATC100B110BT500XT
ATC
R1
1K?, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
10 K?, 1/4 W Chip Resistor
CRCW12061002FKEA
Vishay
R3
10
?, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF7S19170HSR5
IC MOSFET RF N-CHAN NI-880S
MRF7S19210HSR5
MOSFET RF N-CH 28V 63W NI780S
MRF7S21080HSR5
MOSFET RF N-CH 22W NI-780S
MRF7S21110HSR5
MOSFET RF N-CH 33W NI-780S
MRF7S21150HSR5
MOSFET RF N-CH 150W NI780S
MRF7S21170HR5
IC MOSFET RF N-CHAN NI-880
MRF7S21210HSR5
MOSFET RF N-CH 63W NI-780S
MRF7S27130HSR5
MOSFET RF N-CH 23W NI-780S
相关代理商/技术参数
MRF7S19120NR1_09
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF7S19170HR3
功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19170HR3_08
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S19170HR5
功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19170HS
制造商:Freescale Semiconductor 功能描述: 制造商:FREESCALE-SEMI 功能描述:
MRF7S19170HSR3
功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19170HSR5
功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19210HR3
功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 28V 63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray